電子ビームの走査方法によるドーズ量の3次元制御

抄録

Transfer process such as nanoimprinting is effective for fabricating micro/nano structures over a large area. Releasability of nanoimprint molds is improved by the inclination of its side walls. In this study, we focused on the shape of the resist sidewall, which is the template of the mold, and tried to control the inclination of the sidewall by modifying the scanning method of the electron beam in electron beam lithography. By using the proposed method, inclination angles of 86.1~95.8° were successfully fabricated. It was also shown that this result was due to electron scattering and inhomogeneity of the dose amount.