電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Fabrication of Reactive Ion Etching Systems for Deep Silicon Machining
Seongho KongKazuyuki MinamiMasayoshi Esashi
著者情報
キーワード: Si RIE, CCP, ICP, Micromachining
ジャーナル フリー

1997 年 117 巻 1 号 p. 10-14

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抄録
Reactive ion etching (RIE) systems using capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources with SF6 gas have been developed for deep silicon machining with high aspect ratio. The developed RIE systems demonstrated high etch rate (2.3μm/min) and high selectivity (1700) for a sputtered nickel mask in silicon etching. A large capacity turbo molecular pump (TMP) with a small etching chamber was used to realize a low pressure with a high flow rate of etching gas. A circulatory cooling apparatus was used for cooling a silicon wafer. Etch rate showed uniformity within 10% for the area of 50cm2. Using the RIE system, we succeeded to etch a 200μm thick silicon wafer vertically through the thickness with an aspect ratio greater than 10. The RIE can be applied to fabricate three-dimensional silicon microstructures.
著者関連情報
© The Institute of Electrical Engineers of Japan
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