電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
窒素イオンビームを用いたポリイミド膜の高アスペクト比微細加工
柳沢 佳一桑野 博喜中野 聡子
著者情報
ジャーナル フリー

1997 年 117 巻 1 号 p. 39-44

詳細
抄録
A high-aspect-ratio and precise patterning of thick polyimide film has been achieved using a 50-μm-thick polyimide film masked by 0.1-μm-thick Ta film. The film was etched by a low-energy N2 ion beam with a single-grid Kaufman-type ion source. The selective ratio of the polyimide film vs. the Ta film reached more than 600. The wall angle of the polyimide pattern was about 2°. Etching rate experiments and XPS, FTIR, AFM analysis suggest that N2 ion beam etching is a reactive ion etching.
著者関連情報
© 電気学会
前の記事 次の記事
feedback
Top