MONOLITHIC PYROELECTRIC INFRARED IMAGE SENSOR USING PVDF THIN FILM

Abstract

A 16×16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600V/W and a detectivlty of 1.6×10⁷cmHz^1/2W^-1 have been realized with a sensing area of 75×75μm².