This paper deals with detailed characteristics and improvement of the sensitivity of vertical Hall cells. The vertical Hall cells are useful devices for realizing a two-or three-dimensional magnetic sensor system because they can detect the magnetic field parallel to the chip surface. First, we focused on the behavior of the offset voltage of the vertical Hall cells which is the most important specification for a practical system. The experiments showed that there is an optimum geometry with respect to the offset voltage and the spatial resolution, and the offset stability with the applied stress of vertical Hall cells is 10 to 100 times as great as that of lateral Hall cells. Moreover, we attempted a drastic improvement of the sensitivity by using trench grooves to restrict the current path. As a result, a very high product sensitivity of 1230V/AT was obtained.
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