1998 Volume 118 Issue 10 Pages 437-443
A rotating vibration type silicon angular rate sensor was fabricated by deep ICPRIE and XeF2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. This sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. The angular rate was measured in a range between -250 to +250deg./sec. and measured sensitivity was 2.1fF/(deg./sec.).
IEEJ Transactions on Industry Applications
IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Power and Energy
IEEJ Transactions on Fundamentals and Materials
The Journal of The Institute of Electrical Engineers of Japan
The transactions of the Institute of Electrical Engineers of Japan.C
The transactions of the Institute of Electrical Engineers of Japan.B
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan