電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
16N測定用積層型CdZnTe半導体検出器の試作
西沢 博志犬島 浩藤原 博次中村 裕明
著者情報
ジャーナル フリー

2001 年 121 巻 8 号 p. 458-463

詳細
抄録
The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13MeV γ-ray from 16N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137Cs and 60Co, and 16N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident γ-ray energy and its intensity ratio was identified and that the energy of 6MeV γ-ray could be measured by the prototype of the stacked detector.
著者関連情報
© 電気学会
前の記事 次の記事
feedback
Top