抄録
A high photosensitive detector has been intensively required and Avalanche photo multiplications in the detector using a-Si : H based photosensitive layer were already reported. In this report, a developed photodiode construction is proposed and some results on the photoelectric conversion characteristics and dark current origin are discussed. Although photomultiplication photocurrent was observed, dark currents were strongly influence by the fabrication process and the interface of oxide hole edge.
