抄録
Fabricating CdTe radiation detectors in p-i-n structure helps to reduce the leakage current to level lower than that of detectors in metal-semiconductor-metal(MSM) design. Cl-compensated single crystal CdTe were used for the detector fabrication. Iodine doped homepilayers were grown on the one face of the crystal using radical assisted metalorganic chemical vapor deposition technique while p-type layers were formed on the opposite side by impurity diffusion technique employing excimer laser radiation. Devices thus fabricated showed good diode property with low leakage current and good photo-response for x-ray photons.
