抄録
We have developed a logarithmic-converting CMOS area image sensor that is fabricated using a general CMOS process. The sensor has 340 (H) ×228 (V) pixels, in which there is a logarithmic-converting circuit that uses MOSFET subthreshold operation. Its cell size is 20μm (H) ×20μm (V). It outputs a signal logarithmically proportional to the integrated amount of the photo current generated by incident light more than five orders of magnitude in intensity. It can therefore take bright and dark objects at the same time. We expect that this sensor will find consumer (i. e., digital still cameras, digital video cameras, and so on) and industrial application.
