DOPANT ACTIVATION IN POLY-SI_<1-X>GE_X AT LOW TEMPERATURE

抄録

Isothermal annealing of boron or phosphorus implanted polycrystalline Si_<1-x>Ge_x thin films, with x varying from 0.3 to 0.55 was studied in this paper. In low temperature (<=600℃) annealing, grain boundary segregation causes both the conductivity and the Hall mobility to decrease during extended annealing. The effective activation of phosphorus was less than 20% and decreases with increasing Ge content. Boron activation could reach above 70%. It was also found that Si_<1-x> Ge_x could be oxidized at 600℃ in a conventional furnace even with pure N_2 protection.