抄録
Cell circuit and pattern layout for CMOS image sensor was studied in view of minimizing cell area. Capacitor address cell and 1 transistor 1 capacitor cell can be designed other than conventional transistor address cell. We estimated theoretical minimum cell size for each types of cell and applied this result to realize 5.6μm cell by 0.6μm design rule. Then 330k pixel VGA format CMOS image sensor could be fabricated in 1/4 inch optical format and good reproduced image was obtained with 700mV of saturation level and 1mVp-p of fixed pattern noise.
