抄録
A high-performance 801x512-element PtSi Schottky-barrier infrared image sensor has been developed with an enhanced Charge Sweep Device (CSD) readout architecture. In the enhanced CSD, the power consumption of the CSD has been reduced by employing a multiphase CSD with an on-chip multiphase CMOS clock generator. Flexible vertical scan is also possible using a newly developed transfer gate scanner. A large fill factor of 61% is obtained in spite of the small pixel size of 17x20 μm^2. The differential temperature response and noise equivalent temperature difference with f/1.2 optics at 300 K were 2.2x10^4 electrons/K and 0.037K, respectively. The saturation signal level was 2.1x10^4 electrons and the total power consumption of the device was about 50mW.
