抄録
A 16x16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilized an electrospray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600 V/W and a detectivity of 1.6x10^7 cmHz^<1/2>W^<-1> have been realized with a sensing area of 75 μmx75μm at a chopping frequency of 55Hz. A thermal image of the circular window of a black body furnace has been successfully obtained. These results offer the promising prospect of a monolithic pyroelectric IR image sensor, although uniformity in voltage sensitivity, noise and offset voltage still remain to be improved.
