抄録
We have studied the photocurrent multiplication in hydrogenated amorphous silicon-based Au/p-a-SiC : H/a-Si : H/n-c-Si structure photodiodes. They were fabricated on n c-Si substrate with the different impurity concentration, using an electron cyclotron resonance microwave plasma chemical vapor deposition (ECRPCVD) system. The photocurrent dependency on impurity concentration of the n c-Si were evaluated, and the photocurrent multiplication were observed only in the sample of about impulity concentration of 2×10^<16>cm^<-3>. The wavelength dependency on the incident light suggests that the photocurrent increase was caused by the avalanche multiplication in the a-Si : H layer.
