抄録
A CMOS image sensor with two-stage charge transfer for fluorescence lifetime measurement is presented in this paper. The first transfer stage sifts fluorescence decaying in all pixels simultaneously. The second transfer stage reads out accumulated signals of each pixel sequentially at video rate. The sensor chip was fabricated using 0.18μm CMOS pinned diode image sensor process. The pixel array is 256×256. The time domain measurement uses ultraviolet laser to excite fura-2 solution which is used as fluorescent sample. The fluorescent decaying image and lifetime are successfully measured with a 250ps step time window.
