Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence

Abstract

We investigated below-gap levels in MOCVD-grown Si-doped In_<0.16>Ga_<0.84>N/In_<0.02>Ga_<0.98>N Quantum well (QW) structures by an optical method of Two-wavelength Excited Photoluminescence, as the non-destructive, non-contacting spectroscopy without electrode. Though the dependence of intensity and energy (1.27〜1.95eV) of the below-gap excitation on the photoluminescence intensity change, we found that Si-doping in both barrier and well layers reduced the density of below-gap states in the QW region.