Si doped AlN:Eu Thin-Film EL Devices Prepared by Sputtering Method
Details
Silicon doped blue-emitting AlN:Eu thin-films were prepared by rf magnetron sputtering method. The concentration of Eu and Si was controlled with the EuF_3 and Si_3N_4 contents in Al-based composite targets. PL spectra of Si doped AlN: Eu thin-films appeared at blue region having a peak around 450nm due to the transition of divalent Eu ion. The Commission International de l'Eclairage (CIE) color coordinates were x=0.169 and y=0.130. To understand the effects of Si doping in the AlN:Eu thin-film phosphor, concentration dependence was measured. Although EL devices having the double insulating structure with using BaTa_2O_6 insulating film were also fabricated, the luminance was poor.
