BaAl_2S_4:Eu EL Devices Prepared by DC-Reactive-Sputtering
Details
BaAl_2S_4:Eu thin films were prepared by DC reactive sputtering using Ar; H2S mixture gas. It was found that best condition of flow ratio (H2S/total gas) is 2%. The crystallinity and PL characteristics of BaAl_2S_4:Eu thin films show best under the condition of substrate temperature during the sputtering and annealing temperature are 400℃ and 790℃, respectively. EL devices having double insulating structure were fabricated with these conditions. The maximum luminance was 14.4cd/m2 under the 1kHz sinusoidal voltage. The maximum luminance level increased with insert the buffer layers between the phosphor layer and both insulating layers.
