In this study, We have been prepared the SrGa_2S_4:Eu thin film phosphors. Preparation of the SrGa_2S_4:Eu needs high temperature annealing. But an ordinary substrate can't stand high temperature over 600℃. We use the laser annealing method, in order to solve this problem. In the before study, KrF excimer laser (248nm) was used for beam source. It was difficult to achieve good emission properties by this method. In the present study, Nd:YAG laser (355nm) was used, and we analyzed effect of this change. Two pellets, Ga_2S_3:Eu (1mol%) and SrS:Eu (2mol%) are deposited by two Electron Beams (EB) evaporation system. After deposited, high temperature annealing (850℃) and laser annealing after pre-annealing (500℃) were carried out. On the latter method samples showed SrGa_2S_4 phase by XRD, and green emission peaked at 533nm based on Eu^<2+> ion in SrGa_2S_4. Therefore, it was found that high-luminance SrGa_2S_4:Eu thin film can be prepared on low temperature lower than 600℃. On the CL luminance, it was showed 18,000cd/m^2 higher than the high temperature annealing sample under excitation with 10kV, 60μA/cm^2. This result showed the strong improvement of emitting properties was achieved.
