The Effect of Substrate Crystal Orientations on Surface Properties of SiC Thin Layer Grown by MBE

Abstract

Silicon carbide is expected to be used as a next-generation material because of its more effective mechanical and electronic properties. The hetero Molecular Beam Epitaxy process may provide a method to form thin layered mono-crystal Silicon carbide on a Silicon substrate. The present paper aims to clarify the relation between the layer's properties and the substrate crystal orientations, especially (100) and (110), and discusses the mechanism of Silicon carbide growth under certain operating conditions through a series of tests and evaluations.