Journal of Advanced Simulation in Science and Engineering
Online ISSN : 2188-5303
Papers
Optimal Channel Doping Profile of Two-Dimensional Metal-Oxide-Semiconductor Field-Effect Transistors via Geometric Programming
Yiming LiYing-Chieh Chen
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Volume 2 (2015) Issue 1 Pages 178-200

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Abstract

In this study, we theoretically optimize a two-dimensional (2D) channel doping profile of metal-oxide-semiconductor field-effect transistors (MOSFETs) with given current voltage (I-V) characteristics by using a geometric programming (GP) technique. Inverse modeling of channel doping profile for device characteristics with simultaneously considering the short-channel effect (SCE) and random-dopant-fluctuation-induced threshold voltage fluctuation (RDF-induced σVt) is advanced. The formulated model of doping profile is a GP problem which can be transformed into a convex optimization problem and solved globally and efficiently. Constrains of I-V characteristics with including the RDF-induced σVt are included to optimize desired doping profiles. The optimization methodology is applied for 45-nm MOSFET devices and the results are validated with 2D numerical device simulation. This approach provides an alternative way to design doping profile for various technologies of MOSFETs.

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© 2015 Japan Society for Simulation Technology
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