ボディ効果とスイッチトキャパシタ技術に基づくCMOSの低電圧リファレンス

抄録

A low power CMOS voltage reference using body effect and switched-capacitor technique is introduced. The output voltage is generated by the gate-source voltage. The MOSFETs are working on subthreshold region thus the power consumption is greatly reduced. By utilizing the switched-capacitor, only one transistor is required to generate the reference voltage. The proposed circuit is designed and simulated under 0.18-μm CMOS technology. The output voltage is 117.74 mV, and the T.C. is 50.0 ppm/°C ranging from -40°C to 80°C. The voltage line-sensitivity is 0.19 %/V ranging from 1.2 V to 3.2 V. The average current consumption is about 95 nA.