マルチ電極システムによるゲート絶縁薄膜の非破壊評価

抄録

In previous study, we developed a technique to evaluate the electrical conductivity of the whole gate insulator of a 12-inch Si wafer using a non-destructive and non-contact pulse photo-conductivity method. But, the time duration of measuring just 170 points on the specimen was very long due to one single probe in our system and a slow move of the stage. We have, then, developed a multiple-electrode system with 100 electrodes and multiple-flash lamp for a faster evaluation. This system is necessary for mass production of semiconductor devices.