主催: 電気・情報関係学会九州支部連合大会委員会
会議名: 2019年度電気・情報関係学会九州支部連合大会
回次: 72
開催地: 九州工業大学
開催日: 2019/09/27 - 2019/09/28
The voltage generated when a temperature gradient ΔT is applied to a bilayer element consisting of a thin paramagnetic metal (PM) and a ferrimagnetic insulator (FMI), which is called the spin-thermoelectric effect (STE) or inverse spin-Hall effect (ISHE) voltage, has drawn great attention. Platinum and YIG are typical reference substances used for PM and FMI, respectively. We evaluate the VSTE measured for STE elements that use 200-nm-thick Bi:NIG films grown on a (100)GGG substrate by the MOD method as FMI and 10-µm-thick YIG, Bi:YIG films having excellent crystallinity grown on a (111)GGG substrate by the LPE method.
