抄録
Thermal chemical vapor deposition (CVD) is a fundamental technique that is used to process thin films and fine powders in various industries. However, there are few ways to model the thermal CVD reaction process. Consequently, many industrial resources have been expended to determine empirically the optimum conditions for film growth. To resolve this problem it is necessary to analyze and model thermal CVD based on reaction engineering. The distribution of the growth rate in a tubular reactor provides much information on the reaction processes and chemical kinetics in the gas phase. The shapes of films grown at microsize roughness can give information on the surface reaction process.
This paper presents, and explains the ways to determine the kinetic constants involved in, simplified reaction schemes for some thermal CVD systems. The growth rate and composition distribution of the film grown in a small tubular reactor and the shape of film grown at microscale roughness were well explained by the computational simulations. This method of analyzing and modeling CVD systems requires small experiments and simulations. It proved useful for finding the optimum operating conditions for synthesizing a film, because growth rate and distribution in any shaped reactor and at microscale roughness can be predicted under various conditions using computer simulations.
