抄録
Sintering behavior of SiC with oxide additives is controlled by SiO2 content and particle size of starting powders at temperatures below 1900°C and chemical reactions, which evolve gaseous products (possibly SiO, Al2O, CO), between SiC, free carbon, SiO2 on SiC and oxide additives at temperatures above 1900°C.
The higher SiO2 content leads to a higher sinterability at temperatures below 1900°C. The higher carbon content leads to a lower sintered density at temperatures above 1900°C. The β→α phase trasformation might be affected by the amount of 2H phase in raw materials. The materials sintered at 1950°C show homogeneous microstructure although significant β→α transformation has occurred during sintering. The α-SiC is more compatible with oxide liquid than β-SiC at temperatures above 1950°C.
Acknowledgment Stay of Young-Wook Kim in National Institute for Research in Inorganic Materials was supported by Japan-Korea Industrial Technology Co-operation Foundation (JKF).
