BaTi0.91(Hf0.5, Zr0.5)0.09O3 thin films were formed on Pt(111)/Ti/SiO2/Si(100) substrates by pulsed laser deposition using fourth-harmonic-generated light (λ=266nm) of a Nd3+: YAG laser beam. Crystallinity and stoichiometry of the thin films were determined by X-ray diffraction, X-ray fluorescence analysis and electron probe microanalysis. Their ferroelectric properties were investigated from electrical measurements. The leakage current density increased from 10-11 to 10-3 A·cm-2 with increasing electric field up to 200kV·cm-1. The dielectric constant, remanent polarization and coercive field of the BaTi0.91(Hf0.5, Zr0.5)0.09O3 thin films were estimated to be 120 at 1kHz, 8.7μC·cm-2 and 127kV·cm-1, respectively.
