Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
Online ISSN : 1882-1022
Print ISSN : 0914-5400
ISSN-L : 0914-5400
A1-xTi2+xM5-xO12 (A=Na, K, M=Al, Ga) のウイスカー
藤木 良規渡辺 遵小野田 義人吉門 進三大鉢 忠
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1990 年 98 巻 1142 号 p. 1169-1171

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Whiskers of A1-xTi2+xM5-xO12(A=Na, K and M=Al, Ga) were grown by the flux method. Na1-xTi2+xAl5-xO12 whiskers were obtained by slow-cooling from a melt at 1300°C using a mixture of 30mol% of a crystal composition of (Na2O)1 (TiO2)1(Al2O3)1 and 70mol% of a flux composition of (Na2O)1(MoO3)1.5. K1-xTi2+xGa5-xO12 whiskers were also obtained in the same growth technique using a mixture consisting of 30-40mol% of a crystal composition of (K2O)1(TiO2)1(Ga2O3)1 and of 60-70mol% of a flux composition of (K2O)1(MoO3)1.5. The x value in general formula was 0.2 from chemical analysis. The A ions are mobile by the existence of vacancy site. These whiskers showed very high ionic conductivities of 2.0-3.0S⋅cm-1 at300K and 32.5GHz.

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