CVD法によるPLZTエピタキシャル薄膜の育成
1991 年 99 巻 1155 号 p. 1169-1171
詳細
1991 年 99 巻 1155 号 p. 1169-1171
(Pb, La) (Zr, Ti)O3 films were prepared by CVD using Pb(DPM)2, La(DPM)3, Zr(O⋅t-Bu)4, Ti(O⋅i-Pr)4 and O2 as starting materials. PLZT films were grown with almost complete epitaxy on (100) MgO substrates. The deposition rate of the film was about 50-100nm/min. Some optical properties were almost the same as those of PLZT ceramics.
