We investigated thickness dependence of critical current density(Jc(d)) for BaZrO3-introduced GdBa2Cu3O7-δ(BZO-GdBCO) films fabricated using pulsed laser deposition. Contrary to the typical Jc(d) behavior of REBCO(RE = rare earth elements) thin films, which exhibit decreasing dependency as thickness increases, the BZO-GdBCO films showed an increasing dependency under magnetic fields for the thickness of 0.4-1.2 μm. In addition,increasing dependency was seen for all field directions including both the c-axis and ab-plane and these results suggest that the behaviors can be ascribed to the thermally activated flux creep, irrespectibe of magnetic-field direction and type of pinning site.
