抄録
A commercial pressure sensor is studied to assess the applicability of the poly-crystalline silicon gauges at cryogenic temperatures under magnetic fields. Its pressure sensitivity and resistance of the gauges are studied down to 5K under the magnetic fields of up to 8T. Its performance is compared with that of previously reported commercial pressure sensor with the crystalline silicon gauges. Its dependence of pressure sensitivity on temperature change from room temperature down to 6K is smaller than 4% as long as the sensor is operated in the constant voltage mode. The change in the sensitivity under magnetic fields is also as small as 2% under the same mode. However, its zero point shift due to the temperature change is larger than 20% of the full span. The zero point shift also shows an anomalous dependence on the magnetic fields, which is about 10% of the full span and independent of temperature. Some means to improve its performance are discussed.
