Development of High Reliability Process for Fine Cu Wiring for 2.1D Packaging

Taka Kanayama; Haruki Sueyoshi; Kanta Nogita; Tadashi Suetsugu

doi:10.5104/jiepeng.13.E20-005-1

Transactions of The Japan Institute of Electronics Packaging

Online ISSN : 1884-8028
Print ISSN : 1883-3365
ISSN-L : 1883-3365

Short Note

Development of High Reliability Process for Fine Cu Wiring for 2.1D Packaging

Taka Kanayama, Haruki Sueyoshi, Kanta Nogita, Tadashi Suetsugu

Author information

Keywords: Semi-Additive Process, Chip to Chip Connection, High Reliability, Electroless Ni-P Plating, Catalyst Activity

JOURNAL FREE ACCESS

2020 Volume 13 Pages E20-005-1-E20-005-3

DOI https://doi.org/10.5104/jiepeng.13.E20-005-1

Details

Abstract

The electrochemical migration resistance was improved by plating Ni-P on the surface of L/S = 2/2 μm Cu wiring. Ni-P plating film became more uniform by increasing dissolved oxygen in the Pd catalyst solution. This is because oxidation of the Pd-substituted film increased a catalytic activity of Pd.

Content from these authors

Favorites & Alerts

Corresponding author

Register with J-STAGE for free!