Development of High Reliability Process for Fine Cu Wiring for 2.1D Packaging

Taka Kanayama; Haruki Sueyoshi; Kanta Nogita; Tadashi Suetsugu

doi:10.5104/jiepeng.13.E20-005-1

Transactions of The Japan Institute of Electronics Packaging

Online ISSN : 1884-8028
Print ISSN : 1883-3365
ISSN-L : 1883-3365

Short Note

Development of High Reliability Process for Fine Cu Wiring for 2.1D Packaging

Taka Kanayama, Haruki Sueyoshi, Kanta Nogita, Tadashi Suetsugu

著者情報

キーワード: Semi-Additive Process, Chip to Chip Connection, High Reliability, Electroless Ni-P Plating, Catalyst Activity

ジャーナルフリー

2020 年 13 巻 p. E20-005-1-E20-005-3

DOI https://doi.org/10.5104/jiepeng.13.E20-005-1

詳細

抄録

The electrochemical migration resistance was improved by plating Ni-P on the surface of L/S = 2/2 μm Cu wiring. Ni-P plating film became more uniform by increasing dissolved oxygen in the Pd catalyst solution. This is because oxidation of the Pd-substituted film increased a catalytic activity of Pd.

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