Abstract
The physical and structural properties of the ferroelectric capacitors on a releasable substrate were shown for the clarification of effective process parameters in the fabrication of high-density capacitors. A Ti-bonding layer located at the corner is found to be effective for the prevention of the destruction during the crystallization process. The tensile stress of the capacitor films is caused by the deflection of the film surface. The crystallized capacitors have a perovskite structure and the same characterization as that on the non-releasable substrate. This paper describes the preparation process and also the estimation of the capacitors for the nano-transfer method. In this study, the releasing property of the thin film was evaluated as an important factor in this process. To evaluate the releasing property of the thin film, a tape test was performed and the conditions of the deposition and substrate were considered for PZT.
