抄録
In the experiment the recrystallization of the spattered silver film on a fused quartz plate was observed. The prepared film was 0.09_??_0.65 μ in thickness. The electrical resistance of these films was measured/in vacuum furnace with annealing tempertaure. With ordinary temperature the resistance is increased slightly with temperature. For the films of 0.24 μ, 0.15 μ, and 0.05 μ the electrical resistance begins to decrease from about 120°C or 393°K, which corresponds to the lowest value of temperature-ratio TR/Ts=0.33 or recrystallization given by Tammann, of which TR is the absoiute temperature of the recrystallization and TR is the melting point, the calculated value TR of silver being 401°K. If the film is prepared thinner, the decrease of electrical resistance is steeper. The maximum steepness is located at about 200°C, which corresponds to the so-called recrystallization temperature of silver. The decrease of resistance stops at 410_??_430°C, and then begins to increase from that point. In the state of region from 120°C to 430°C, we can observe the microscopic spherulite, which is the crystallite first formed from the amorphous silver in the molecular field of the quartz plate. With the temperature over 450°C the spherulite begins to aggregate forming the stereo-crystals and the remaining Portions become the window. The spectroscopic method of detecting the recrystallization of silver was used taking advantage of the specific minimum of reflectivity in the ultraviolet It is observed that the surface of thinner films of spattered state are amorphona, while the films crystallize by the further annealing.
