抄録
The growth and structure of diamond films deposited on (111) Si substrates by the hot-filament CVD method were investigated by use of transmission electron microscopy. The density and growth rate of diamond particles on scratched (111) Si substrates were extremely high compared with that without any scratching of substrates. Fine β-SiC particles were observed over the whole area of the substrate after deposition in any case of surface condition. The nucleation and growth of diamond particles seem to be independent from the existence of SiC particles on substrates.
