High overload inverters were developed by using SiC devices for the first time, although its realization by using Si devices had been difficult because of Si's low maximum Tj. High resistive SiC pin diodes with heavy electron irradiation are proposed for the turn-on snubber circuit as an alternative to the conventional resistor and diode. The inverter circuit was greatly miniaturized by mounting the high resistive SiC pin diode in a SiCGT (SiC Commutated Gate turn-off Thyristor) module and using no heat sink for the resistor. The newly developed 100 kVA overload SiC inverter provides an overload capability rate of 200 % and can supply 300 kVA for up to 3 seconds.
