パワー半導体素子の極低温特性
1997 年 23 巻 2 号 p. 17-27
詳細
1997 年 23 巻 2 号 p. 17-27
Characteristics of power semiconductor devices such as Power MOSFETs, IGBTs and Thyristors at cryogenic temperature were examined by experiments and computer simulations using 2-Dimensional models. Power MOSFETs showed excellent characteristics at 80K. NPT (Non-Punch Through) IGBTs will show better characteristics than PT (Punch Through) IGBTs at cryogenic temperature. Thyristors can be operated, although on-voltage increases at cryogenic temperature.
