抄録
In this paper the current fed inverter with IGBT (Insulated Gate Bipolar Transistor) & the voltage fed inverter with P. MOSFET (Power Metal-Oxied Semiconductor Field Effect Transistor) are presented. The current fed inverter uses IGBT as a switching device in the combination of series & muiti-parallels strings to increase the permissible current & voltage, then 1, 000kW-50kHz can be realized on which method is met to the requirement of high power out-put. The voltage fed inverter uses P. MOSFET as a switching device, then 1, 000kW-200kHz is realizes from the structure of module units. The obtained power 100kW per module, can be met to the requirement of high power out-put as well. An actual usage of examples for Induction heating application are shown.
