歪み超格子を中間層に用いたSi基板上へのIII-V化合物半導体のMOCVD成長
1987 年 13 巻 4 号 p. 248-252
詳細
1987 年 13 巻 4 号 p. 248-252
GaAs is grown on Si substrate with strained superlattice intermediate layers. Defects, deep levels and stress of the grown GaAs layers on Si are characterized. The use of straind layer superlattices would be effective to obtain other III-V compound semiconductors on Si substrates.
