シリコン固液界面における酸素の偏析現象
1997 年 24 巻 2 号 p. 82-
詳細
1997 年 24 巻 2 号 p. 82-
The incorporation of oxygen into silicon single crystals from the melt is examined in terms of an experiment and a model on a transient solidification. A transient analysis is proposed to obtain equilibrium segregation coefficient of oxygen in silicon and diffusion constant of oxygen in the melt almost independently. The analysis estimated these values of equilibrium segregation coefficient of oxygen in silicon and diffusion constant of oxygen in silicon melt.
