抄録
GaN layers with low dislocation density were grown by facet-initiated epitaxial lateral overgrowth (FIELO) method. The important reduction mechanism m the FIELO was found to be the bending effect of dislocations caused by the facet formation m the beginning of the growth. Crack-free GaN layers with the thickness of 500 μm were successfully grown on 2-inch-diameter sapphire substrates by using this method.
