2002 年 29 巻 2 号 p. 31-
TiO_2 has the advantage of low lattice mismatch of just about 2 % with Gubic GaN. We studied cubic GaN grouth on a (001) rutile TiO_2 substrate by ECR-MBE. For the first time, oriented cubic GaN polytype was obtained on the substrate by optimizing growth temperature. Growth orientation of the cubic GaN was found to be <110>.