日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
ECR-MBE法を用いたパターニング基板上多結晶GaN成長の検討 : エピキタシャル成長II
上野 朝隆北村 健間宮 恒山田 良山下 直樹荒木 努名西 〓之
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2002 年 29 巻 2 号 p. 32-

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Polycrystalline GaN layers were grown on a patterning silica glass substrate by ECR'MBE. Photolithography technique and RIE were used for the patterning process. Although improvement of a-axis orientation of GaN was not confirmed by RHEED, a large number of oriented grains lined up at the side of the pattern were observed by SEM.

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© 2002 日本結晶成長学会
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