日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Defect Filtration of Hollow Pyramidal Structured GaSb Epilayers Grown on GaSb (100) Patterned Substrates by Liquid Phase Epitaxy
章 国強小山 忠信熊川 征司早川 泰弘
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2003 年 30 巻 3 号 p. 50-

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Pyramidal structured gallium antimonide epilayers with mirror-like {100} and {111} facets were grown on GaSb (100) patterned substrates by liquid phase epitaxy (LPE). The {111} facets were identified as two different faces: (111)A and (111)B.The pyramidal structure was hollow. Due to the presence of a masking layer and hollow space, both the epitaxial lateral overgrowth (ELO) layer and the top portion of the epilayer were of high quality. This result indicated that the hollow pyramidal structure has defect filtration effect.
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© 2003 The Japanese Association for Crystal Growth
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