25pB06 Si基板上c-GaN成長のためのBP緩衝層の成長及び評価(半導体エピ(2),第34回結晶成長国内会議)
2004 年 31 巻 3 号 p. 137-
詳細
2004 年 31 巻 3 号 p. 137-
Boron monophosphide (BP) films were grown on silicon (100) by MOCVD. The layer grown on silicon (100) surfaces was found to be a single crystal BP with cubic structure by measuring X-ray diffraction. This paper describes the growth conditions and the evaluation of BP films obtained.
