抄録
LPE of InP on Si was attempt by area selective epitaxy and epitaxial lateral overgrowth technique for the reduction of the dislocation density and the lattice strain. The area selective epitaxy was achieved in the narrow open seed area and the small nuclei were formed on the wide opening area. X-ray diffraction results have shown the lattice strain in the InP nuclei on Si substrate. Huber etching revealed the dislocation-related etch pits on the area selective epitaxial layers.
