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原稿種別: 表紙
2005 年 32 巻 3 号 p.
Cover1-
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
App1-
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
i-
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
i-
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
i-
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
ii-iii
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
iv-
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
v-vii
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原稿種別: 付録等
2005 年 32 巻 3 号 p.
viii-xviii
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柿本 浩一, 劉 立軍, 棚橋 克人, 金田 寛
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2005 年 32 巻 3 号 p.
109-
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Numerical and experimental analyses revealed the enhancement of diffusion of oxygen and boron by laser irradiation. We have studied the effect of enhancement of diffusion of boron and oxygen including both isotopes of ^<16>O and ^<18>O by laser irradiation. The study clarified that diffusion of the impurities was enhanced by laser irradiation about 2.5 to 8 times larger than the case without laser irradiation in the temperature range from 990℃ to 1200℃. We confirmed from temperature measurement of the sample that such enhancement was not based on temperature increase by laser irradiation but based on the effect of irradiation of the laser. The effect of frequency of the laser on the diffusion was observed by changing wavelength of the laser.
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劉 立軍, 中野 智, 柿本 浩一
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2005 年 32 巻 3 号 p.
110-
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Three-dimensional (3D) analysis was carried out for oxygen transport in silicon melts of a Czochralski (CZ) growth process with electromagnetic fields using 3D global modeling. The system with electromagnetic fields was established with a transverse magnetic field and an injected electric current applied on the melt surface. The results showed that control of the oxygen transport in a melt is possible by appropriate positioning of the electrode on the melt surface.
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劉 立軍, 中野 智, 柿本 浩一
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2005 年 32 巻 3 号 p.
111-
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A code was developed for dynamic global simulation of a casting process for silicon solar cells. Time-dependent distributions of temperature and iron in the silicon ingot during a solidification process were simulated. The influences of input heater power distribution and its varying history on heat and iron transfers and solidification velocity were investigated.
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干川 岳志, 太子 敏則, 黄 晋二, 黄 新明, 宇田 聡
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2005 年 32 巻 3 号 p.
112-
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Segregation of Ga in CZ-Si crystal growth was investigated. An equilibrium segregation coefficient of Ga was obtained to be k_0=0.0081 from analysing the Ga distribution in Si crystals grown with different growth rates with BPS theory.
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佐々 敏明, 阿部 亮人, 西村 鈴香, 寺嶋 一高
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2005 年 32 巻 3 号 p.
113-
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The β-FeSi_2 is difficult to grow crystal from the melts. We tried growth of the β-FeSi_2 bulk crystal by using the solid phase growth method. The polycrystal in β-FeSi2 was obtained when we quenched the melt. Then this sample was annealed. The crystal growth and evaluation will be discussed.
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山口 浩司, 中村 剛, 鍋谷 暢一, 松本 俊, 加藤 孝正
原稿種別: 本文
2005 年 32 巻 3 号 p.
114-
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Phosphorous-doped CuInS_2 bulk crystals were grown by the temperature difference method under controlled S vapor pressure. InP was used as a p-type dopant. Grown crystals showed p-type conductivity in S-poor alloy composition region. We report some electrical properties, mobility and carrier concentration, and PL spectra of P-doped CuInS_2.
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木下 恭一, 緒方 康行, 足立 聡, 石川 毅彦, 正木 匡彦, 高柳 昌弘, 依田 眞一, 荒井 昌和, 近藤 康洋
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2005 年 32 巻 3 号 p.
115-
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We have invented the traveling liquidus-zone (TLZ) method for growing compositionally uniform In_<0.3>Ga_<0.7>As crystals. Since the TLZ method requires diffusion limited mass transport, plate crystals were grown in order to suppress convection in a melt in the terrestrial application of the TLZ method to the growth of In_<0.3>Ga_<0.7>As crystals. We succeeded in growing homogeneous In_<0.3>Ga_<0.7>As plate crystals and evaluated their quality as a substrate by EPMA, X-ray rocking curve measurements, EPD measurements, electrical properties measurements, PL measurements and so on.
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間宮 幹人, 永井 秀明, Martin Castillo, 奥谷 猛
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2005 年 32 巻 3 号 p.
116-
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Crystal growth of bulk CdTe in short-duration microgravity is performed by the unidirectional cooling method. The largest growth grains in microgravity samples are 4X2mm. The cooling profiles indicate undercooling melts in microgravity. Cooling melt samples in microgravity generate strong gradient of temperature due to stop thermal convections. Temperature distribution in the melt is calculated by the one-dimensional equation of heat conduction, and about 100 K-undercooling is considered to occur at the cooling surface.
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今清水 雄二, 渡辺 慈朗
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2005 年 32 巻 3 号 p.
117-
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An addition of small amounts of aluminium or gold suppresses the dislocation formation in the Czochralski grown copper crystal, while nickel addition promotes the formation of slip dislocation. This suggests a contribution of compositional stress due to inhomogeneous distribution of solute atoms to the dislocation formation in the Czochralski growth of copper dilute alloy crystal.
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砂川 一郎
原稿種別: 本文
2005 年 32 巻 3 号 p.
118-119
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How our understandings on the genesis, solid state physics and applications of diamond crystals have been advanced is critically reviewed. Since diamond crystal consists of only carbon with pure covalent bonding, it serves as the best standard material to solve both thermodynamic and kinetic problems, solid state physics as well as to decode letters sent from the depth of the earth and space.
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藤森 直治
原稿種別: 本文
2005 年 32 巻 3 号 p.
120-121
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Diamond is know as to have many excellent characteristics and expected to be utilized in various field. The progress was performed by the development of CVD methods, which gave us different shaped diamond than before. Recent progress of diamond novel application and the status of diamond technology will be reported, and the research direction toward the wide application will be discussed.
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角谷 均, 戸田 直大, 佐藤 周一
原稿種別: 本文
2005 年 32 巻 3 号 p.
122-123
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High-quality, large-size type IIa diamond crystals up to 8 carats (up to 10mm in diameter) have been successfully synthesized by using the temperature gradient method at high pressure and high temperature. The synthetic diamonds show no absorptions due to impurities and have very high crystalline quality. These salient characteristics of the large-size high-quality synthetic type IIa diamond permit the application to a considerably wide range of industrial and scientific uses.
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澤邊 厚仁, 安藤 豊
原稿種別: 本文
2005 年 32 巻 3 号 p.
124-125
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Epitaxial growth techniques of diamond on foreign substrate materials are reviewed in the scientific and technical point of view. Growth process and growth mechanism of diamond on epitaxially grown iridium underlayer are mainly stated. Novel patterned heteroepitaxial growth technique of diamond is also introduced.
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広瀬 洋一
原稿種別: 本文
2005 年 32 巻 3 号 p.
126-127
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Diamond crystals have been synthesized by hot-filament CVD method using methanol only. A synthesis device can be composed of glass-bottles and rubber stoppers. Diamond crystals with good crystallinity have been grown on a substrate using oxy-acetylene combustion flame in the atmosphere.
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寺前 文晴, 水谷 充宏, 丸山 隆浩, 成塚 重弥
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2005 年 32 巻 3 号 p.
128-
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In micro channel epitaxy (MCE) it is sometimes observed a "lift up" phenomenon of the laterally grown layer, which grows separately from the substrate. The "lift up" is inconvenient for the device use of the layer because it makes the layer unstable and fragile. We studied its cause by changing the separation of the aperture for the microchannel in the mask. Consequently, it was found that Berg effect is related to the "lift up" and that controlling the supersaturation in the growth is very important to suppress it.
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藤田 武志, 樋口 絢一, 野本 昌宏, 高橋 信一
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2005 年 32 巻 3 号 p.
129-
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InP ELO layers were grown on InP(100) substrate by LPE. For ELO, stripe patterns of 50-300μm spacing period that oriented 60° off the <011> direction were formed on substrates. The shapes of ELO layers depend on the spacing periods, the cooling rate and the saturation degrees. Additionally, ELO layers became thinner and wider owing to the Ge doping.
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小山 裕, 菅井 麻希, 東風谷 敏男, 西澤 潤一
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2005 年 32 巻 3 号 p.
130-
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LPE of InP on Si was attempt by area selective epitaxy and epitaxial lateral overgrowth technique for the reduction of the dislocation density and the lattice strain. The area selective epitaxy was achieved in the narrow open seed area and the small nuclei were formed on the wide opening area. X-ray diffraction results have shown the lattice strain in the InP nuclei on Si substrate. Huber etching revealed the dislocation-related etch pits on the area selective epitaxial layers.
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木村 俊博, 長谷川 裕, 小山 裕, 西澤 潤一
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2005 年 32 巻 3 号 p.
131-
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InGaPN layers were formed on InP substrates by using LPE method at the constant growth temperature of 400-600℃. Cross-hatched patterns from the misfit dislocation were observed on InGaPN surface. In the sample grown at 400℃, P_2N cluster ion was detected by SIMS measurement. The possibility for LPE of nitride-semiconductor InGaPN layer was confirmed.
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木村 俊博, 小山 裕, 西澤 潤一
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2005 年 32 巻 3 号 p.
132-
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InMnP layers were epitaxially grown on InP substrate by using LPE method at the constant growth temperatures. Two-dimensional terraced layers with cross-hatched patterns were obtained. Mn concentration was evaluated by positive SIMS measurements. The effectiveness of LPE method for III-V based magnetic semiconductor InMnP layers was confirmed.
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中村 慎吾, Pachamuthu Jayavel, 小山 忠信, 熊川 征司, 早川 泰弘
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2005 年 32 巻 3 号 p.
133-
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InAs_xSb_<1-x> ternary layers were grown on InAs_xSb_<1-x> step buffer layers and InSb buffer layers by hot wall epitaxy. When increasing the thickness of the step buffer layers, three dimensional island growth has been changed to two dimensional plateau-like growth. It is observed that the flatness of the epilayers was improved by increasing the thickness of the step buffer layers. On the other hand, when increasing the thickness of the InSb layers, the FWHM values by XRD rocking curve were decreased from 2.26° to 0.58° in comparison with direct growth of the layers on GaAs substrate.
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羽深 等, 西田 幹也, 関口 貴志, 竹内 隆, 相原 雅彦
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2005 年 32 巻 3 号 p.
134-
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Chemical reactions of monomethylsilane (MMS) are studied using a rapid thermal processing reactor, particularly focusing on the thermal decomposition and the reactions with HCl gas. HCl gas is found to chlorinate MMS and its decomposed species to lower the silicon deposition rate and adjust the composition of SiC film.
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金子 聰, 宮川 宣明, 菅 俊祐, 細川 雄一郎
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2005 年 32 巻 3 号 p.
135-
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Polycrystalline SiC films have been successfully grown by catalytic CVD from monomethylsilane at the substrate temperature, 300[℃]. FT-IR spectra of obtained films show mainly Si-C bond absorption on optimum condition and glancing angle XRD indicates a 3C-SiC main peak.
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金子 聰, 宮川 宣明, 小野 亜樹子, 長田 英樹
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2005 年 32 巻 3 号 p.
136-
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3C-SiC growth on Si(111)4° off substrates have been performed by low pressure Cat-CVD. The substrate temperature was changed from 700℃ to 760℃ by electric current heating. Monomethylsilane (MMS) was introduced in a chamber with back pressure of 10^<-8> Torr as a source gas. The effect of filament was analyzed by quadrupole mass spectrometer (QMS).
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金子 聰, 宮川 宣明, 細川 雄一朗, 菅 俊介
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2005 年 32 巻 3 号 p.
137-
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Microcrystalline SiC (μc-SiC) films have been successfully grown by cat-CVD (hot-filament catalysis), on the silicon substrate of the temperature, 300℃. Plasma CVD growth of a-SiC: H in the same chamber is already reported. Each processes and film properties are compared.
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河村 貴宏, 寒川 義裕, 柿本 浩一
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2005 年 32 巻 3 号 p.
138-
発行日: 2005/08/17
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Thermal conductivity of GaN influenced by defects was calculated by molecular dynamics simulation, and we investigated the cause of the discrepancy between calculation and experimental results. We employed equilibrium molecular dynamics based on Green-Kubo's formula.
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河村 貴宏, 寒川 義裕, 柿本 浩一
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2005 年 32 巻 3 号 p.
139-
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Thermal conductivity of AlN/GaN superlattices was investigated by molecular dynamics simulation. We employed equilibrium molecular dynamics based on Green-Kubo's formula. The results showed that the value of thermal conductivity in the c-axis direction which is perpendicular to layers had seriously reduced compared to that of bulk GaN.
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菊池 友, ソミンタック アルマンド S., 有屋田 修, 和田 元, 大鉢 忠
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2005 年 32 巻 3 号 p.
140-
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in-situ monitoring and controlling of activated nitrogen flux was invented for RF-MBE growth. in-situ measurement of N^* flux was established with -66.4V biased platinum wire under charged-particle-free environment during GaN growth using RF-MBE. 94.7% of c-GaN(001)/Si(001) and almost atomically flat h-GaN(0001)/Si(111) were achieved using this method.
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江里口 健一, 石井 健一, 村上 尚, 熊谷 義直, 纐纈 明伯, 大平 重男
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2005 年 32 巻 3 号 p.
141-
発行日: 2005/08/17
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Hydride vapor phase epitaxy (HVPE) of AlN has been performed using AlCl_3 precursor, which is generated by the reaction between metallic Al and HCl. If high-grade AlCl_3 powder can be obtained, a new HVPE of AlN with mass production potential is possible. We found that high quality layers of AlN were grown using the solid AlCl_3 source.
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寒川 義裕, 柿本 浩一
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2005 年 32 巻 3 号 p.
142-
発行日: 2005/08/17
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We performed Monte Carlo simulations in order to understand compositional instability of InGaN films grown by vapor phase epitaxy. The results imply that site-exchanging process of atoms near the growth surface has a significant influence on the atomic configurations in the InGaN films.
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村上 尚, 菊地 潤, 熊谷 義直, 纐纈 明伯
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2005 年 32 巻 3 号 p.
143-
発行日: 2005/08/17
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Thermodynamic analysis for the halide vapor phase epitaxy (HVPE) of Al_xGa_<1-x>N was performed. We found that the hydrogen (H_2) in the carrier gas played an important role to control the solid composition of the alloy. The solid composition x in Al_xGa_<1-x>N can be controlled by changing the H_2 mole fraction in the carrier gas under a fixed low Al input ratio.
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井上 茂, 岡本 浩一郎, 松木 伸行, 金 太源, 藤岡 洋
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2005 年 32 巻 3 号 p.
144-
発行日: 2005/08/17
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We have grown GaN on Cu(111) substrates by pulsed laser deposition (PLD). We have found that high quality GaN grows epitaxially with the use of low temperature AlN buffer layers and the epitaxial relationship between GaN and Cu is GaN[0001]//Cu[111] and GaN[11-20]//Cu[01-1].
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太田 実雄, 小林 篤, 藤岡 洋, 尾嶋 正治
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2005 年 32 巻 3 号 p.
145-
発行日: 2005/08/17
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We have succeeded in room temperature epitaxial growth of group III nitrides on (Mn,Zn)Fe_2O_4 substrates with the use of pulsed laser deposition. The reduction in the growth temperature leads to suppression of the intermixing reactions at the nitride/substrate heterointerfaces and improvement in crystal quality of the nitride films.
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川口 祐司, 小林 篤, 太田 実雄, 藤岡 洋
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2005 年 32 巻 3 号 p.
146-
発行日: 2005/08/17
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We have grown GaN on nearly lattice matched ZrB_2 substrates at low substrate temperatures by the use of PLD. We have found that high quality GaN grows on ZrB_2 substrates with the layer-by-layer mode even at room temperature. This success can be attributed to the suppression of interfacial reaction between GaN and ZrB_2.
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竹内 智彦, 西村 鈴香, 佐久間 智教, 松本 智, 寺嶋 一高
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2005 年 32 巻 3 号 p.
147-
発行日: 2005/08/17
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Today, the substrates using for the study of c-GaN growth are mainly GaAs and 3C-SiC wafer. However, these have a large lattice mismatch, about 20% and 3.3% respectively. In our study, Boronmonophosphide grown on Si(100) by MOCVD is using for c-GaN substrate. The lattice mismatch between BP(100) and c-GaN(100) is about 0.7%. The growth and characterization of BP epitaxial wafer using for the growth of c-GaN substrate will be reported at the meeting.
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西村 鈴香, 竹内 智彦, 寺嶋 一高, 成塚 重弥
原稿種別: 本文
2005 年 32 巻 3 号 p.
148-
発行日: 2005/08/17
公開日: 2017/05/31
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GaN crystals have been one of the most promising materials for the use in short wavelength laser diode. We have studied to grow BP layer on 2 inch in diameter silicon substrates for buffer crystal of c-GaN. It has been found that BP layer with around 1μm thickness has been successfully grown on silicon substrates without cracks. The continuous GaN crystals have been obtained on BP/Si substrates using MBE. The crystal growth technique and crystal quality will be discussed.
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大鉢 忠, 菊池 友, A. S. Somintac, 小田原 道哉, 宇田川 隆, 和田 元
原稿種別: 本文
2005 年 32 巻 3 号 p.
149-
発行日: 2005/08/17
公開日: 2017/05/31
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Growth of cubic GaN was performed on MOCVD grown BP/Si(001) substrates using RF-MBE. Surface RHEED reconstruction patterns of (2x2) and (4x1) were observed under Ga rich and stoichiometric conditions, respectively. The purity of c-GaN was 98% which was measured from the ratio of integrated intensity of (002)c and (1-101)h XRD peaks.
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E. G. Villora, 島村 清史, 青木 和夫, 北村 健二, 一ノ瀬 昇
原稿種別: 本文
2005 年 32 巻 3 号 p.
150-
発行日: 2005/08/17
公開日: 2017/05/31
ジャーナル
フリー
-
E. G. Villora, 島村 清史, 青木 和夫, 北村 健二, 一ノ瀬 昇
原稿種別: 本文
2005 年 32 巻 3 号 p.
151-
発行日: 2005/08/17
公開日: 2017/05/31
ジャーナル
フリー