17aB06 ホットウォールエピタキシー法によるバッファ層上へのInAs_xSb_<1-x>結晶成長(半導体エピ(1),第35回結晶成長国内会議)

抄録

InAs_xSb_<1-x> ternary layers were grown on InAs_xSb_<1-x> step buffer layers and InSb buffer layers by hot wall epitaxy. When increasing the thickness of the step buffer layers, three dimensional island growth has been changed to two dimensional plateau-like growth. It is observed that the flatness of the epilayers was improved by increasing the thickness of the step buffer layers. On the other hand, when increasing the thickness of the InSb layers, the FWHM values by XRD rocking curve were decreased from 2.26° to 0.58° in comparison with direct growth of the layers on GaAs substrate.